B-1: Hours-long Transient Leakage Current in MOS Structures after Ultra-High Total lonizing-Doses
H. Dewitte1, P. Paillet 2, S. Rizzolo3, C. Marcandella2, V Goiffon1
1 ISAE-SUPAERO, France
2 CEA, France
3 Airbus Defense and Space S.A.S, France
The abstract investigates the apparition after irradiation and the fast ambient temperature annealing of a leakage current in p-MOS structures. In particular, it discusses the origin of the current, the effect of the bias, and the dose rate.
B-2: Enhancement of Sample-to-Sample Variability lnduced by Total lonizing Dose in 16 nm Bulk nfinFETs
T. Ma1, S. Bonaldo1, S. Mattiazzo2,5, A. Baschilotto3,5, C. Enz4 , A. Paccagnella1,5, S. Gerardin6
1 University of Padova, ltaly
2 University of Bergamo, ltaly
3 University of Milano Bicocca, Israel
4 Institute of Microengineering, EPFL, Switzerland
5 INFN, ltaly
6 DEI - Padova University, ltaly
TID-induced sample-to-sample variability is investigated in 16 nm bulk nFinFETs. The sample-to-sample variability increases significantly at ultra-high doses, due to the impact of random dopant fluctuations.
PB-1: X-Ray Impact on Advanced High Voltage BCD Technology Platform
M. Basso1, A. Danesi1, S. Bertaiola1. A. Veggetti1, A. Andreini1, P. Galbiati1
1 STMicroelectronics, ltaly
Xray effects on BCD platform are studied. Strong dependence of the BVdss vs.radiation dose is found. The impact is correlated with the doping a typical behavior of ReSurF devices and is equivalent to additional charge inside the drain.
PB-2: Characterization of the Effects of Neutron-lnduced Displacement Damage on the SiGe:C Heterojunction Bipolar Transistors
D. Sotskov1, A. Kuznetsov1, V. Elesin1, I. Selishchev1, V. Kotov1, A. Nikiforov1
1 National Research Nuclear University MEPhl (Moscow Engineering Physics Institute), Russian Federation
This paper explores effects of neutron-induced displacement damage on static and high frequency parameters of three types SiGe:C npn-heterostructure bipolar transistors from the SGB25V BiCMOS technology.
PB-3L: TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultra-High Doses
S. Bonaldo1, M. Gorchichko2, E. Zhang2, T. Ma1, S. Mattiazzo3, M. Bagatin1, A. Paccagnella1, S. Gerardin1, R. Schrimpf2, R. Reed2, D. Linten4, J. Mitard4, D. Fleetwood2
1 University of Padova, Italy
2 Vanderbilt University, USA
3 University of Bergamo, Italy
4 Imec, Belgium
Gate-all-around Si nanowire FETs are characterized by DC and low frequency noise measurements at ultra-high doses up to 300 Mrad(SiO2). Worst-case TID degradation is observed for long-channel pGAAFETs.